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    Integration method enables high-performance oxide-based spintronic devices on silicon substrates

    1 week ago

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    A research team from the Ningbo Institute of Materials Technology and Engineering (NIMTE) of the Chinese Academy of Sciences (CAS) has proposed a hybrid transfer and epitaxy strategy, enabling the heterogeneous integration of single-crystal oxide spin Hall materials on silicon substrates for high-performance oxide-based spintronic devices.
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